Harrison Jin: BF-08. Domain Wall Leaky-Integrate-Fire Dendrites with Spatiotemporally Varied Inputs for Event-Based Sensing Sam Liu: FF-08. Wafer-Scale SOT-MRAM for Energy- and Memory-Efficient Analog Computing Sabiq Islam: GG-11. Predicting Novel Tunnel Barrier Materials for Magnetic Tunnel Junctions using [...]
Check out our new article in ACS Applied Nano Materials. This work is a close collaboration between my group and Artur M. Pinto, with Filipa Silva as a visiting Ph.D. at UT Austin working closely with Hui-Ping Chang and Leopoldo [...]
Check out our just-published work on high-rate deposition and characterization of CoZrO for on-chip power! This was a collaborative effort between our group, Alex Hanson, and Southwest Research Institute (SWRI), led by Ph.D. student Elaine Ng and supported by SWRI [...]
Zulfidin (Bobojon) Khodzhaev wrote a comprehensive review on voltage-controlled skyrmions in chambers for neuromorphic computing, you can check it out here: https://www.sciencedirect.com/science/article/pii/S1359028625000075?dgcid=author
Great to see the work of INC Lab students and alumni Can Cui, Thomas Leonard, Nicholas Zogbi, and Sam Liu highlighted in UT Cockrell School of Engineering’s article, “Magnets Emulate Neurons for Next-Generation Computing!” Click here to read it.
Congratulations to Sam Liu for receiving the Ben Streetman Senior Award “For Outstanding Research by a Graduate Student in Electronic and Photonic Materials and Devices."
We have an exciting paper just published on leaky, integrate, and fire (LIF) artificial neurons using magnetic domain walls, read out by magnetic tunnel junctions (MTJs). As predicted by simulation e.g. by Wesley "Gunther" Brigner and Joseph S. Friedman, the [...]
Our paper on magnetic domain wall based integrate-and-fire neurons is now published in Nano Letters! Click here to read it!
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The MRAM Tech Group has put out this article on analyzing the impact of ambient magnetic fields on MRAM, to show MRAM can operate well in normal ambient magnetic field environments. This is important especially for use of MRAM in [...]
