Integrated Nano Computing Lab

At the INC Lab, led by Prof. Jean Anne Incorvia at the University of Texas at Austin, we develop practical nano-devices for the future of computing. We study the fundamental physics and materials properties of emerging materials, and work to bridge the gap from test structures to practical devices to circuits and systems. This vertical approach includes theoretical and experimental work at the materials, devices, and circuits levels. We seek to understand the materials properties, and then show how they can be designed into devices that do not just stand alone, but can perform useful computing tasks.

We are facing a time when we are reaching the limits of scaling improvements using current technology.  Current transistors waste energy both while switching and when idle, which ends up as wasted heat in our computers. On the other end of the spectrum, we are facing new big-data applications for computing that require large, dense memories that are distributed with logic, and applications like artificial intelligence and neuromorphic computing that require massive parallel computation.

New physics and materials, such as magnetic materials and 2D materials, have the potential for more energy efficient computing.  They also have novel physical properties that can be utilized, such as naturally low-dimensional sizes for ultra-scaled electronics, non-volatility (keeping its state when off), oscillatory dynamics, device-to-device interactions, low to no idle power dissipation, low-temperature fabrication, and in-memory computing possibilities.  This is an exciting time where we have the tools to apply new types of physics and materials to real-world devices, with a strong motivation to do so.

We are also interested in other applications of nanotechnology, such as quantum computing and medicine.

Research Highlights

Magnetic Logic Devices and Circuits

We are researching new device and circuit designs for computation using magnetic materials.

Neuromorphic Computing

We work on designing and building magnetic resistive devices for analog/neuromorphic/bio-inspired computing.

Spintronics using 2D TMD Materials

2D transition metal dichalcogenide (TMD) materials have emerging applications for spintronics. We are studying the spin and valley Hall effect in TMD transistors such as WSe2 and WS2.

Image is divided into thirds by color, top and bottom are blue and are labeled “FM”. The middle, a much thinner layer, is orange and labeled “insulator”

Materials for Magnetic Tunnel Junctions

We are investigating new materials for both the electrodes and tunnel barrier to improve the on/off ratio and functionality of magnetic tunnel junctions.

Black and white image depicting ultra-scaled transistors, reading from top to bottom on the left, “Ag, Cr, Sc, ScOx, BP, SiO2” and on the right, “ScOx ~ 9nm, BP ~ 6.5nm, 5nm”

Ultra-Scaled Transistors using 2D Materials

We are investigating 2D transistors with materials such as TMDs and black phosphorus.

Avada Admin

New Spintronic 2D Materials

We are studying new types of low-dimensional materials with promising applications in spintronics.

Present and Past Research Centers

Microelectronics Research Center:

Texas Materials Institute:

Center for Dynamics and Control of Materials:

Sandia RadEdge team


Southwest Research Institute Energize Program:

UT Austin Portugal Program:

Research Support

1. National Science Foundation

2. Sandia National Laboratories

3. US Department of Energy

4. Samsung Electronics

5. Intel

6. UT Portugal Program

7. Southwest Research Institute (SWRI)